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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXFK420N10T

IXFK420N10T - THT N channel transistors

IXFK420N10T
Description

Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology GigaMOS™
HiPerFET™
Trench™
Polarisation unipolar
Drain-source voltage 100V
Drain current 420A
Power dissipation 1.67kW
Case TO264
Gate-source voltage ±20V
On-state resistance 2.6mΩ
Mounting THT
Gate charge 670nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 140ns
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Development and design: Seventh Cat