IXFJ20N85X - THT N channel transistors

IXFJ20N85X
Description

Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
X-Class
Polarisation unipolar
Drain-source voltage 850V
Drain current 9.5A
Pulsed drain current 50A
Power dissipation 110W
Case ISO247™
Gate-source voltage ±30V
On-state resistance 0.36Ω
Mounting THT
Gate charge 63nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices ultra junction x-class
Reverse recovery time 190ns
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Development and design: Seventh Cat