IXFH80N65X2-4 - THT N channel transistors

IXFH80N65X2-4
Description

Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
X2-Class
Polarisation unipolar
Drain-source voltage 650V
Drain current 80A
Power dissipation 890W
Case TO247-4
Gate-source voltage ±30V
On-state resistance 38mΩ
Mounting THT
Gate charge 0.14µC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat