IXFH6N120 - THT N channel transistors

IXFH6N120
Description

Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 6A
Power dissipation 300W
Case TO247-3
Mounting THT
Gate charge 56nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat