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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXFH52N30P

IXFH52N30P - THT N channel transistors

IXFH52N30P
Description

Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 300V
Drain current 52A
Power dissipation 400W
Case TO247-3
Gate-source voltage ±20V
On-state resistance 73mΩ
Mounting THT
Gate charge 110nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 160ns
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Development and design: Seventh Cat