IXFH50N30Q3 - THT N channel transistors

IXFH50N30Q3
Description

Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polarisation unipolar
Drain-source voltage 300V
Drain current 50A
Power dissipation 690W
Case TO247-3
Gate-source voltage ±20V
On-state resistance 80mΩ
Mounting THT
Gate charge 65nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 250ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat