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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXFH320N10T2

IXFH320N10T2 - THT N channel transistors

IXFH320N10T2
Description

Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO247-3; 98ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 320A
Power dissipation 1kW
Case TO247-3
On-state resistance 3.5mΩ
Mounting THT
Gate charge 430nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 98ns
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Development and design: Seventh Cat