IXFH230N10T - THT N channel transistors

IXFH230N10T
Description

Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 230A
Power dissipation 650W
Case TO247-3
On-state resistance 4.7mΩ
Mounting THT
Gate charge 250nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices thrench gate power mosfet
Reverse recovery time 82ns
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Development and design: Seventh Cat