IXFH22N65X2 - THT N channel transistors

IXFH22N65X2
Description

Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO247-3; 145ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 22A
Power dissipation 390W
Case TO247-3
On-state resistance 0.145Ω
Mounting THT
Gate charge 37nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices ultra junction x-class
Reverse recovery time 145ns
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Development and design: Seventh Cat