IXFH170N25X3 - THT N channel transistors

IXFH170N25X3
Description

Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO247-3; 140ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 170A
Power dissipation 890W
Case TO247-3
On-state resistance 7.4mΩ
Mounting THT
Gate charge 0.19µC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices ultra junction x-class
Reverse recovery time 140ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat