IXFH120N20P - THT N channel transistors

IXFH120N20P
Description

Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 200V
Drain current 120A
Power dissipation 714W
Case TO247-3
On-state resistance 22mΩ
Mounting THT
Gate charge 152nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 100ns
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Development and design: Seventh Cat