IXFH120N15P - THT N channel transistors

IXFH120N15P
Description

Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 150V
Drain current 120A
Power dissipation 600W
Case TO247-3
On-state resistance 16mΩ
Mounting THT
Gate charge 150nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat