IXFH110N10P - THT N channel transistors

IXFH110N10P
Description

Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 100V
Drain current 110A
Power dissipation 480W
Case TO247-3
On-state resistance 15mΩ
Mounting THT
Gate charge 110nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat