IXFH10N80P - THT N channel transistors

IXFH10N80P
Description

Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 800V
Drain current 10A
Power dissipation 300W
Case TO247-3
Mounting THT
Gate charge 40nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat