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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXFH10N100P

IXFH10N100P - THT N channel transistors

IXFH10N100P
Description

Transistor: N-MOSFET; Polar™; unipolar; 1kV; 10A; 380W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 1kV
Drain current 10A
Power dissipation 380W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 1.4Ω
Mounting THT
Gate charge 56nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 300ns
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Development and design: Seventh Cat