IXFB82N60P - THT N channel transistors

IXFB82N60P
Description

Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 600V
Drain current 82A
Power dissipation 1.25kW
Case PLUS264™
Gate-source voltage ±30V
On-state resistance 75mΩ
Mounting THT
Gate charge 240nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat