IXFB300N10P - THT N channel transistors

IXFB300N10P
Description

Transistor: N-MOSFET; Polar™; unipolar; 100V; 300A; 1500W; PLUS264™

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 100V
Drain current 300A
Power dissipation 1.5kW
Case PLUS264™
Gate-source voltage ±20V
On-state resistance 5.5mΩ
Mounting THT
Gate charge 279nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat