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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IXFB170N30P

IXFB170N30P - THT N channel transistors

IXFB170N30P
Description

Transistor: N-MOSFET; Polar™; unipolar; 300V; 170A; 1250W; PLUS264™

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 300V
Drain current 170A
Power dissipation 1.25kW
Case PLUS264™
Gate-source voltage ±20V
On-state resistance 18mΩ
Mounting THT
Gate charge 258nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 200ns
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Development and design: Seventh Cat