IXFA7N80P - SMD N channel transistors

IXFA7N80P
Description

Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 800V
Drain current 7A
Power dissipation 200W
Case TO263
Gate-source voltage ±30V
On-state resistance 1.44Ω
Mounting SMD
Gate charge 32nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 250ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat