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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / IXFA7N100P

IXFA7N100P - SMD N channel transistors

IXFA7N100P
Description

Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO263; 300ns

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 1kV
Drain current 7A
Power dissipation 300W
Case TO263
Gate-source voltage ±30V
On-state resistance 1.9Ω
Mounting SMD
Gate charge 47nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 300ns
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Development and design: Seventh Cat