IXFA3N120 - SMD N channel transistors

IXFA3N120
Description

Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 3A
Power dissipation 200W
Case TO263
Mounting SMD
Gate charge 39nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat