IXFA12N50P - SMD N channel transistors

IXFA12N50P
Description

Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET
Technology HiPerFET™
Polar™
Polarisation unipolar
Drain-source voltage 500V
Drain current 12A
Power dissipation 200W
Case TO263
Gate-source voltage ±30V
On-state resistance 0.5Ω
Mounting SMD
Gate charge 29nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 300ns
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat