IXDH20N120 - THT IGBT transistors

IXDH20N120
Description

Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology NPT
Collector-emitter voltage 1.2kV
Collector current 25A
Power dissipation 200W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 50A
Mounting THT
Gate charge 70nC
Kind of package tube
Turn-on time 175ns
Turn-off time 570ns
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Development and design: Seventh Cat