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Transistor: IGBT; BiMOSFET™; 1.7kV; 65A; 1.04kW; PLUS247™
| Manufacturer |
IXYS |
| Type of transistor |
IGBT |
| Technology |
BiMOSFET™ |
| Collector-emitter voltage |
1.7kV |
| Collector current |
65A |
| Power dissipation |
1.04kW |
| Case |
PLUS247™ |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
300A |
| Mounting |
THT |
| Gate charge |
358nC |
| Kind of package |
tube |
| Turn-on time |
65ns |
| Turn-off time |
595ns |
| Features of semiconductor devices |
high voltage |