Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IXBT6N170

IXBT6N170 - SMD IGBT transistors

IXBT6N170
Description

Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; D3PAK

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
FRED
Collector-emitter voltage 1.7kV
Collector current 6A
Power dissipation 75W
Case D3PAK
Gate-emitter voltage ±20V
Pulsed collector current 36A
Mounting SMD
Gate charge 17nC
Kind of package tube
Turn-on time 104ns
Turn-off time 700ns
Features of semiconductor devices high voltage
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat