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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IXBT2N250

IXBT2N250 - SMD IGBT transistors

IXBT2N250
Description

Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
Collector-emitter voltage 2.5kV
Collector current 2A
Power dissipation 32W
Case TO268
Gate-emitter voltage ±20V
Pulsed collector current 13A
Mounting SMD
Gate charge 10.6nC
Kind of package tube
Turn-on time 310ns
Turn-off time 252ns
Features of semiconductor devices high voltage
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Development and design: Seventh Cat