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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IXBT24N170

IXBT24N170 - SMD IGBT transistors

IXBT24N170
Description

Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO268

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
Collector-emitter voltage 1.7kV
Collector current 24A
Power dissipation 250W
Case TO268
Gate-emitter voltage ±20V
Pulsed collector current 230A
Mounting SMD
Gate charge 0.14µC
Kind of package tube
Turn-on time 190ns
Turn-off time 1285ns
Features of semiconductor devices high voltage
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Development and design: Seventh Cat