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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / SMD IGBT transistors / IXBT16N170AHV

IXBT16N170AHV - SMD IGBT transistors

IXBT16N170AHV
Description

Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
Collector-emitter voltage 1.7kV
Collector current 10A
Power dissipation 150W
Case TO268HV
Gate-emitter voltage ±20V
Pulsed collector current 40A
Mounting SMD
Gate charge 65nC
Kind of package tube
Turn-on time 43ns
Turn-off time 370ns
Features of semiconductor devices high voltage
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Development and design: Seventh Cat