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Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 21A; SOT227B
| Manufacturer |
IXYS |
| Type of semiconductor module |
IGBT |
| Semiconductor structure |
single transistor |
| Max. off-state voltage |
1.7kV |
| Collector current |
21A |
| Case |
SOT227B |
| Electrical mounting |
screw |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
265A |
| Power dissipation |
313W |
| Technology |
BiMOSFET™ |
| Features of semiconductor devices |
high voltage |
| Mechanical mounting |
screw |