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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXBK55N300

IXBK55N300 - THT IGBT transistors

IXBK55N300
Description

Transistor: IGBT; BiMOSFET™; 3kV; 55A; 625W; TO264

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
Collector-emitter voltage 3kV
Collector current 55A
Power dissipation 625W
Case TO264
Gate-emitter voltage ±20V
Pulsed collector current 600A
Mounting THT
Gate charge 335nC
Kind of package tube
Turn-on time 637ns
Turn-off time 475ns
Features of semiconductor devices high voltage
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Development and design: Seventh Cat