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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXBH16N170

IXBH16N170 - THT IGBT transistors

IXBH16N170
Description

Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
FRED
Collector-emitter voltage 1.7kV
Collector current 16A
Power dissipation 250W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting THT
Gate charge 72nC
Kind of package tube
Turn-on time 220ns
Turn-off time 940ns
Features of semiconductor devices high voltage
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Development and design: Seventh Cat