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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXBH10N300HV

IXBH10N300HV - THT IGBT transistors

IXBH10N300HV
Description

Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
Collector-emitter voltage 3kV
Collector current 10A
Power dissipation 180W
Case TO247HV
Gate-emitter voltage ±20V
Pulsed collector current 88A
Mounting THT
Gate charge 46nC
Kind of package tube
Turn-on time 805ns
Turn-off time 2.13µs
Features of semiconductor devices high voltage
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Development and design: Seventh Cat