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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXBH10N170

IXBH10N170 - THT IGBT transistors

IXBH10N170
Description

Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
Collector-emitter voltage 1.7kV
Collector current 10A
Power dissipation 140W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 40A
Mounting THT
Gate charge 30nC
Kind of package tube
Turn-on time 63ns
Turn-off time 1.8µs
Features of semiconductor devices high voltage
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Development and design: Seventh Cat