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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / IXBF20N300

IXBF20N300 - THT IGBT transistors

IXBF20N300
Description

Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c

Specifications
Manufacturer IXYS
Type of transistor IGBT
Technology BiMOSFET™
Collector-emitter voltage 3kV
Collector current 34A
Power dissipation 150W
Case ISOPLUS i4-pac™ x024c
Gate-emitter voltage ±20V
Pulsed collector current 130A
Mounting THT
Gate charge 105nC
Kind of package tube
Turn-on time 64ns
Turn-off time 0.3µs
Features of semiconductor devices high voltage
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Development and design: Seventh Cat