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Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV
| Manufacturer |
IXYS |
| Type of semiconductor module |
IGBT |
| Semiconductor structure |
diode/transistor |
| Topology |
IGBT half-bridge |
| Max. off-state voltage |
1.2kV |
| Collector current |
23A |
| Case |
SMPD-B |
| Electrical mounting |
SMT |
| Gate-emitter voltage |
±20V |
| Pulsed collector current |
45A |
| Power dissipation |
130W |
| Technology |
ISOPLUS™ Sonic FRD™ |