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IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A
| Manufacturer |
TEXAS INSTRUMENTS |
| Type of integrated circuit |
driver |
| Topology |
IGBT half-bridge MOSFET half-bridge |
| Kind of integrated circuit |
gate driver high-/low-side |
| Case |
SO16-W |
| Output current |
-5...2.5A |
| Number of channels |
2 |
| Supply voltage |
15...30V DC |
| Integrated circuit features |
galvanically isolated |
| Mounting |
SMD |
| Operating temperature |
-40...125°C |
| Impulse rise time |
35ns |
| Pulse fall time |
37ns |
| Input voltage |
2.25...5.5V |
| Kind of package |
tube |
| Protection |
undervoltage UVP |
| Insulation voltage |
5.7kV |