IRLU110PBF - THT N channel transistors

IRLU110PBF
Description

Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 4.3A
Pulsed drain current 17A
Power dissipation 25W
Case IPAK
TO251
Gate-source voltage ±10V
On-state resistance 0.54Ω
Mounting THT
Gate charge 6.1nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices logic level
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat