IRLR2905TRPBF - SMD N channel transistors

IRLR2905TRPBF
Description

Transistor: N-MOSFET; unipolar; 55V; 30A; Idm: 160A; 110W; DPAK

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 55V
Drain current 30A
Pulsed drain current 160A
Power dissipation 110W
Case DPAK
Gate-source voltage ±16V
On-state resistance 27mΩ
Mounting SMD
Gate charge 48nC
Kind of package reel
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat