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Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
N-MOSFET |
| Technology |
HEXFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
30V |
| Drain current |
2.7A |
| Pulsed drain current |
17A |
| Power dissipation |
0.8W |
| Case |
SOT23 |
| Gate-source voltage |
±12V |
| On-state resistance |
80mΩ |
| Mounting |
SMD |
| Gate charge |
2.9nC |
| Kind of channel |
enhancement |
| Features of semiconductor devices |
logic level |