IRLI640GPBF - THT N channel transistors

IRLI640GPBF
Description

Transistor: N-MOSFET; unipolar; 200V; 9.9A; Idm: 40A; 40W; TO220FP

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 9.9A
Pulsed drain current 40A
Power dissipation 40W
Case TO220FP
Gate-source voltage ±10V
On-state resistance 0.18Ω
Mounting THT
Gate charge 66nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat