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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRLB8314PBF

IRLB8314PBF - THT N channel transistors

IRLB8314PBF
Description

Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 120A
Pulsed drain current 664A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 2.4mΩ
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat