IRLB4132PBF - THT N channel transistors

IRLB4132PBF
Description

Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 100A
Pulsed drain current 620A
Power dissipation 140W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 3.5mΩ
Mounting THT
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat