IRLB4030PBF - THT N channel transistors

IRLB4030PBF
Description

Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 180A
Power dissipation 370W
Case TO220AB
Gate-source voltage ±16V
On-state resistance 4.3mΩ
Mounting THT
Gate charge 87nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat