IRL640PBF - THT N channel transistors

IRL640PBF
Description

Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 68A; 125W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 11A
Pulsed drain current 68A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±10V
On-state resistance 0.27Ω
Mounting THT
Gate charge 66nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat