IRL60HS118 - SMD N channel transistors

IRL60HS118
Description

Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 5
Polarisation unipolar
Drain-source voltage 60V
Drain current 13A
Power dissipation 5.8W
Case PQFN2X2
Gate-source voltage ±20V
On-state resistance 17mΩ
Mounting SMD
Gate charge 5.3nC
Kind of package reel
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat