IRFU9110PBF - THT P channel transistors

IRFU9110PBF
Description

Transistor: P-MOSFET; unipolar; -100V; -3.1A; Idm: -12A; 25W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -3.1A
Pulsed drain current -12A
Power dissipation 25W
Case IPAK
TO251
Gate-source voltage ±20V
On-state resistance 1.2Ω
Mounting THT
Gate charge 8.7nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat