IRFU120NPBF - THT N channel transistors

IRFU120NPBF
Description

Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 9.1A
Power dissipation 39W
Case IPAK
Gate-source voltage ±20V
On-state resistance 0.21Ω
Mounting THT
Gate charge 16.7nC
Kind of channel enhancement
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Development and design: Seventh Cat