IRFSL11N50APBF - THT N channel transistors

IRFSL11N50APBF
Description

Transistor: N-MOSFET; unipolar; 500V; 7A; 190W; I2PAK,TO262

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 7A
Power dissipation 190W
Case I2PAK
TO262
Gate-source voltage ±30V
On-state resistance 0.55Ω
Mounting THT
Gate charge 51nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat