IRFS9N60APBF - SMD N channel transistors

IRFS9N60APBF
Description

Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 5.8A
Power dissipation 170W
Case D2PAK
TO263
Gate-source voltage ±30V
On-state resistance 0.75Ω
Mounting SMD
Gate charge 49nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat