IRFS11N50APBF - SMD N channel transistors

IRFS11N50APBF
Description

Transistor: N-MOSFET; unipolar; 500V; 7A; 170W; D2PAK,TO263

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 7A
Power dissipation 170W
Case D2PAK
TO263
Gate-source voltage ±30V
On-state resistance 0.52Ω
Mounting SMD
Gate charge 52nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat